Poster Session
Poster Session Chairs: Sehun Kwon(Pusan National University), Junghwan Han(Seoul National University of Science and Technology), Tae-Ik Lee(KITECH)
P01. TaN superconducting line integrability for quantum device on 300 mm wafer
T.Chêne, R. Segaud, T.Chevolleau, S. Minoret, F. Gustavo, F. Lefloch, P. Gergaud, M.Bouvier, J. Garrione, F.Nemouchi - Université Grenoble Alpes
P02. Study on low-temperature plasma-enhanced atomic layer deposition process for Nb thin films
Jun Tanaka, Jun Yamaguchi, Yuhei Otaka, Noboru Sato, Naoki Tamaoki, Atsuhiro Tsukune, Yukihiro Shimogaki - The University of Tokyo
P03. Advanced patterning: tackling the big problems in printing small features
Benjamin G. Eynon, Jr. - Lam Research Corporation
P04. Delafossite oxide PtCoO2 as new conductor for advanced interconnect metallization
Jean-Philippe Soulié, Ho-Yun Lee, Clement Merckling, Johan Swerts, Chen Wu, Seongho Park, Zsolt Tőkei, Christoph Adelmann - IMEC
P05. Hexagonal-structured NiCo thin films for overcoming the resistivity size effect in interconnect applications
Ju Young Sung, Chae Hyun Lee, Ye Bin Lim, In Su Oh, Sang Hyeok Lee, Min Seo Kim, Yun Won Song, and Sang Woon Lee - Ajou University
P06. Suppression of size effect in MoPd thin films for nanoscale interconnects
Hyunjin Lim, Seungchae Lee, Youngseo Na, Yehbeen Im, Donguk Kim, Kangbaek Seo, and Changhwan choi - Hanyang University
P07. Resistivity size effect and structural analysis of single-phase BCC CoMo alloy thin films
Ye Bin Lim, Ju Young Sung, Chae Hyun Lee, In Su Oh, Sang Hyeok Lee, Min Seo Kim, Yun Won Song, and Sang Woon Lee - Ajou University
P08. Reduced compositional fluctuations in epitaxial NiAl thin films
Minghua Zhang, Jeroen E. Scheerder, Jean-Philippe Soulie, Chen Wu, Seongho Park, Zsolt Tőkei, Claudia Fleischmann, and Christoph Adelmann - IMEC
P09. Influence of Ion energy on the surface polarity of AlScN thin films during sputter process
SeongUk Yun, Dohyun Go, Ping-Che Lee, and Andrew Kummel - University of California San Diego
P10. Electromigration behavior of NiAl intermetallic compound as a next-generation interconnect material
Shuhei Yonehara and Junichi Koike - Tohoku University
P11. Impact of redundancy and line extension on short length effect in electromigration reliability
Simone Esposto, Ivan Ciofi, Giuliano Sisto, Kristof Croes, Dragomir Milojevic, Houman Zahedmanesh - IMEC, Belgium, Vrije Universiteit Brussels, Belgium, Université Libre de Bruxelles, KU Leuven
P12. Effect of annealing conditions on the in-situ residual stress and interfacial adhesion energy of ALD Ru/ZnO thin films
Daeyoon Jeong, Yeseul Son, Yuki Mori, Gyunghyun Kim, Juhyun Lee, Changwoo Byun, Soo-Hyun Kim, Young-Bae Park - Andong National University, UNIST, TANAKA PRECIOUS METAL TECHNOLOGIES Co., Ltd., Advanced Institute of Convergence Technology
P13. Design for reliability methodology for automotive IC quality enhancement
Jian-Hung Lee, Runzi Chang, Tao Wang - Marvell Technology, Inc.
P14. Design for manufacturability analysis in dual damascene 28nm-pitch single exposure EUV metal logic designs using
voltage contrast
V.M. Blanco Carballo, D. Cerbu, V. Renaud, J. van de Kerkhove, E. P. De Poortere - IMEC, ASML
P15. Thermal detection methods for rapid laser process and first reuse of the carrier wafer released by Laser Lift-Off (LLO)
process
Jungrae Park, Joshua Peck, Tushar vijaykumar Meshram, Ilseok Son, Joshua Hooge, Angelique Raley, Yoshihiro Kondo, Sitaram Arkalgud - Tokyo Electron Ltd.
P16. Impact of bonding and process effects on intrafield distortion for wafer backside applications
V.M. Blanco Carballo, A. Hsu, V. Renaud, R. Chukka, A-H Tamaddon, C. Tabery, E. P. De Poortere - IMEC, ASML
P17. Bevel engineering in advanced packaging
Keechan Kim, Moty Keovisai - Lam Research Corporation
P18. Etch solutions for high bow wafers bonded on glass carrier for heterogenous integration
Gautam Heman, Behnam Behziz, Alan Miller - Lam Research Corporation
P19. Simulation-based process optimization for maximizing device area and integration efficiency in elevated-epitaxy
technique for monolithic 3D ICs
Yu-Chun Chen, Ching-Lin Chen, Yu-Ming Pan, Chih-Chao Yang, Chang-Hong Shen, Kuan-Neng Chen, Chenming Hu - National Yang Ming Chiao Tung University, Taiwan Semiconductor Research Institute, University of California
P20. Characterization of oxidation-controlled Cu for 3D-chiplet integration
Kenta Hayama, Yutetsu Kamiya, Kohei Nakayama, Fabiana Lie Tanaka, Ryo Aizawa, Yurina Fukumoto, Fumihiro Inoue - Yokohama National University, JCU Corporation
P21. Knowledge-based multi-path neural networks for modeling through packaging glass vias
Suyash Sachdeva, K. Madhu Kiran, Rohit Dhiman - National Institute of Technology Hamirpur
P22. Integration of sputter AlN and Aerosol Deposition AlN for 100 μm height chiplet encapsulation
Dohyun Go, Ashita Victor, Hyunseok Song, Jungho Ryu, Muhannad S. Bakir, Andrew C. Kummel - University of California San Diego, Georgia Institute of Technology, Yeungnam University
P23. Study of a flow modulation CVD (FM-CVD) process at about 400°C for AlN growth as high thermal conductive insulating
films in 3DICs and chiplets
Yuhei Otaka, Ritsuki Sato, Naoki Tamaoki, Jun Yamaguchi, Noboru Sato, Atsuhiro Tsukune, Yukihiro Shimogaki - The University of Tokyo
P24. Advanced CMP optimization for enhanced Cu/Polymer hybrid bonding in 3D IC
Tzu-Yu Chen, Yu-Lun Liu, Kuan-Neng Chen - National Yang Ming Chiao Tung University
P25. Novel low temperature atomic layer annealing of vertical aligned hexagonal boron nitride
Ping Che Lee, Diego Contreras Mora, SeongUk Yun, Dipayan Pal, Amy Ross, Mark Clark, Larry Chen, Ravindra Kanjolia, Mansour Moinpour, Mingeun Choi, Satish Kumar, and Andrew Kummel - 1University of San Diego, EMD Group, Georgia Institute of Technology
P26. Stable resistive switching in highly polycrystalline two-dimensional material-based memristor arrays
Jihoon Yang, Aram Yoon, Donghyun Lee, Dong-Hyeok Lim, Hongsik Jeong, Zonghoon Lee, Mario Lanza, Soon-Yong Kwon - UNIST, King Abdullah University of Science and Technology
P27. Simultaneous selective-area synthesis of polymorphic 2D MoTe2 transistors with ultra-scaled edge contacts
Sora Jang, Seunguk Song, Juwon Han, Aram Yoon, Zonghoon Lee, Changwook Jeong, Soon-Yong Kwon - UNIST, Sungkyunkwan University
P28. Wafer-scale dielectric integration with a single-crystal hexagonal boron nitride interlayer for 2D transistor applications
Jaewon Wang, Hyeonwoo Lee, Jaemin Kim, Haeng Un Yeo, Cheol Hwan Yoon, Min Seok Yoo, Sora Jang, Ju-Hyoung Han, Juwon Han, Junseop Noh, Kitae Park, Joonki Suh, Tae-Sik Yoon, Seunguk Song, Minsu Seol, Chanyong Hwang, Hyung-Joon Shin, Zonghoon Lee, Changwook Jeong, Soon-Yong Kwon - UNIST, Institute for Basic Science, Samsung Advanced Institute of Technology, Sungkyunkwan University, KRISS
P29. Temperature-dependent ALD and Quasi-ALE behavior of ruthenium thin films
Youngseo Na, Hyunjin Lim, Sangkuk Han, Hyojin Ahn, Yehbeen Im, Kangbaek Seo, Wonjae Choi, Changhwan Choi - Hanyang University
P30. High-performance ALD-Ru process using thermally stable new Ru precursor for Cu-alternative interconnects
Hideaki Nakatsubo, Jeongha Kim, Sang Bok Kim, Soo-Hyun Kim - TANAKA PRECIOUS METAL TECHNOLOGIES Co., Ltd., UNIST
P31. Study of Resistivity Reduction by Annealing with a Choice of Complexing Agent in Electroless Plated Ru
Takanobu Hamamura, Yuko Ishii, Tomohiro Shimizu, Takeshi Ito, Naoki Fukumuro, Shinji Yae, Shoso Shingubara - Kansai University, University of Hyogo
P32. Atomic layer deposition of Ru using new zero-oxidation state Ru precursor
Na-Gyeong Kang, Min-Ji Ha, Eun-Su Chung, Ji-Hoon Ahn, Jin-Sik Kim, Yoon-A Park - Hanyang university, U.P. Chemical Co. Ltd.
P33. Low resistive Ru thin film on dielectrics without adhesive liner for sub-2nm interconnects
Ryosuke Hayashi, Mizuki Ogawa, Seibun Oshio, Kazuki Adachi, Takahisa Tanaka, Munehiro Tada - Keio University
P34. Epitaxial ruthenium for advanced interconnects
Christoph Adelmann, Jean-Philippe Soulié, Ho-Yun Lee, Clement Merckling, Anurag Vohra, Benoit Van Troeye, François Chancerel, Steven Brems, Johan Swerts, Chen Wu, Seongho Park, Zsolt Tőkei - IMEC
P35. Deposition of Ru using a metal organic Ru precursor and H2 molecules as a non-oxidative reactant for emerging
Ru interconnects
Yohei Kotsugi, Yohei Kotsug, Natsuki Yanatori, Ryosuke Harada, Hirofumi Nakagawa - TANAKA PRECIOUS METAL TECHNOLOGIES Co., Ltd.
P36. Ultra-thin reduced graphene oxide based on self assembled monolayer for Co interconnect diffusion barrier
Sibo Zhao, Xiangyu Ren, Shenghong Ju, Yunwen Wu - Shanghai Jiao Tong University
P37. Electroless CoMn alloy exhibiting excellent diffusion barrier property against Cu diffusion
Yuko Ishii, Takanobu Hamamura, Tomohiro Shimizu, Takeshi Ito, Shoso Shingubara - Kansai University
P38. TiSiN sputtered films as Copper diffusion barriers
Francesca Corbella, Jean-Baptiste Dory, Nicolas Gauthier, Eleonora Garoni - CEA-Leti
P39. A multiscale study on interfacial properties of Ru-doped TaN in advanced interconnects
Minyeong Je, Sunghwan Kim, Geun-Myeong Kim, Ji-Hwan Lee, Seung-Yeol Baek, Hyeon-Seok Do, Youngsoo Kim, Seungyong Yoo, Eunji Jung, Yoon-Suk Kim, Seungmin Lee, Rak-Hwan Kim, Dae Sin Kim - Samsung Electronics Co., Ltd.
P40. Plasma-enhanced atomic layer deposition of yttrium carbide thin films as a promising transition metal carbide for dual
diffusion barrier in Cu and Ru metallization
Minjeong Kweon, Chaehyun Park, Debananda Mohapatra, Sang Bok Kim, Jong-Seong Bae, Taehoon Cheon, and Soo-Hyun Kim - UNIST, Institute for Basic Science, DGIST
P41. Evaluation of ALD-grown MoS2 as Cu diffusion barrier using time-dependent dielectric breakdown
Nguyen Minh Vu, Angelica Azcatl Zacatzi, Sunil Ghimire, Thong Ngo, Charlene Chen, Mark Clark, Ravi Kanjolia, Mansour Moinpour - Merck KGaA
P42. Chemical and elecrtrical charaterization of ALD Cobalt Nitride (CoN) as an alternative barrier for advanced Cu
interconnects
Yeh Been Im, Young Seo Na, Hyun Jin Lim, Dong Uk Kim, Kang Baek Seo, Seung Chae Lee, Changhwan Choi - Hanyang University
P43. Deposition of pinhole and particle free subnanometer TiN films in high aspect ratio spaces
Amy E. Ross, Dipayan Pal, Dohyun Go, Diego Contreras Mora, Ping Che Lee, Danish Baig, Walter Hernandez, Muhannad S Bakir, Jeffrey Spiegelman, Andrew Kummel - University of San Diego, Georgia Institute of Technology, RASIRC
P44. Enhancing barrier performance of atomic layer deposited tantalum nitrides via post-deposition plasma treatment
Da-Ae Kim, Yujin Kim, Jiwoon Jeon, Hanwool Yeon - GIST
P45. Plasma-enhanced atomic layer deposition of MoCx thin films using a liquid Mo precursor
Eun-Su Chung, Min-Ji Ha, Na-Gyeong Kang, Ji-Hoon Ahn, Jin-Sik Kim, MyeongHo Kim, Yungyeong Yi - Hanyang University, U.P. Chemical Co. Ltd.
P46. A revolutionary approach to Cu electroplating: achieving fast deposition rates for Cu interconnects
with a non-consumable anode
Swapnil Deshmukh, Zhian He, Navaneetha Subbaiyan, Shantinath Ghongadi - Lam Research Corporation
P47. Synethesis of single-crystal Cu Via for BEOL interconnect
Jae Wook LEE, Jae Yong SONG - POSTECH
P48. Towards robust ultra-low k spin-on dielectric materials
Hanna Luusua, Heli Kekkonen, Jyri Paulasaari, Amanda Ihalainen, Thomas Gädda, Juha Rantala - PiBond
P49. A theoretical study for substrate-driven selectivity in area-selective atomic layer deposition for
ZnO as a bottomless barrier
Taeyoung kim, Yeseul Son, Semin Kim, Soo-Hyun kim, Byungjo Kim - UNIST
P50. Control of surface oxidation and stress by electrodeposited bilayered Ni film
Takeyasu Saito, Kohei Yamada, Ryosuke Komoda, Kaishu Maeda, Naoki Okamoto - Osaka Metropolitan University
P51. Exploration of residual strain in HfO2 thin films using the 2D-GIXD synchrotron technique
Seonghun Lee, Tae Joo Shin - UNIST
P52. Resistivity engineering of atomic layer deposited tungsten carbonitride for three-dimensional cross point
memory electrodes applications
Seunggyu Na, Minkyu Lee, Namkyu Yoo, Myoungsub Kim, Seung-min Chung, and Hyungjun Kim - Yonsei University, SK Hynix, Korea, Hoseo University
P53. Atomic-scale investigation of plasma-assisted crystallization and dopant redistribution in Al doped TiO₂
via molecular dynamics simulations
Youngmin Sunwoo, Gyuha Lee, Jihwan An, Byungjo Kim - UNIST, POSTECH
P54. Enhancing TCO performance: low-temperature PEALD-deposited In2O3 thin films
Tae-Kyung Kim, Ji-Hyun Gwoen, Hae-Dam Kim, Jin-Seong Park - Hanyang University
P55. Interface engineering for IGZO/Metal contacts: reducing contact resistivity with SiO2 inter-layers using cross-bridge
kelvin resistor analysis
Taewon Hwang, So Young Lim, Sangwoo Lee, Jin-Seong Park - Hanyang University, Tokyo Electron Ltd.
P56. Theoretical investigation of SiO₂ atomic layer deposition using tris(dimethylamino)silane precursor and
H₂O and H₂O₂ reactant
Seungwon Shim, Soo-Hyun Kim, Han-Bo-Ram Lee, Youngho Kang - Incheon National University, UNIST
